Mahdi Pourfath. ORCID iD. Print view. Open a version of this ORCID record formatted for printing. List of computer science publications by Mahdi Pourfath. Ph.D, Vienna University of Technology, Electrical Engineering – Microelectronics . → , Sharif University of Technology, Electrical Engineering -.
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GNRs have recently attracted much interest as they are recognized as promising building blocks for nano-electronic devices. By changing the gate voltage the transmission coefficient of holes through the device is modulated and, as a result, the oourfath current changes. In short devices less than nm carrier transport through the device is nearly ballistic. To achieve more realistic results it is necessary to extend the codes to include 3D geometries.
The Non-Equilibrium Green’s Function Method for Nanoscale Device Simulation
He joined the Institute for Microelectronics in Octoberwhere he received his doctoral degree in technical sciences in July and is currently employed as a post-doctoral researcher. For dynamic response, it is also desirable to use methods based on non-QSA. Recently, a graphene TFET based on a vertical graphene heterostructure was proposed. Erasmus Langer Siegfried Selberherr. He studied electrical engineering at the Sharif University of Technology, where he received the MSc degree in In the next step we employed the non-equilibrium Green’s function formalism to perform a comprehensive study of photo detectors based on GNRs.
The device response was studied for a wide range of photon energies.
The absence of an energy gap, however, seriously jeopardizes the usage of this material for some important electronic applications, including digital circuits. Hierarchical Device Simulation Christoph Jungemann.
The electronic band-structure of GNRs depends on the nature of their edges, which can be zigzag or armchair. Description For modeling the transport of carriers in nanoscale devices, a Green-function formalism is the most accurate approach. The contact between metal and CNT can pourfatb of pourfaty or Schottky type. His scientific interests include quantum transport, simulation of carbon nanotubes and nanoelectronic devices. Their electronic mzhdi exhibit a dependence on the ribbon direction and width.
Therefore the device characteristics can be well optimized by careful geometric design. Solid and dashed curves, respectively, denote the results for biaxial and uniaxial strain along the armchair direction. Finally, the application of these methods to study novel electronic devices such as nanotubes, graphene, Si-nanowires, and low-dimensional thermoelectric devices and photodetectors are discussed.
Dissertation Mahdi Pourfath
Graphene, as the most prominent 2D material, is attractive for use in next-generation nanoelectronic devices because of its high mahdj mobility. We have performed a comprehensive analysis on the effect of strain on the mobility of several TMDs MoS 2MoSe 2WS 2and WSe 2employing ab initio simulations of the band structure and the linearized Boltzmann transport equation for mobility evaluation, including the effects of intrinsic phonons, remote phonons, and screened charge impurities.
All simulations were based on the assumption of cylindrical symmetry. Mahdi Pourfath MSc Dr. We performed a comprehensive theoretical study of the optical properties of GNRs resulting in a general analytical expression for the linear optical conductivity for light polarized parallel to the ribbons axis by employing an orthogonal tight-binding model with nearest neighbor interaction. All the elements of the kinetic equations, mahdj are the device Hamiltonian, contact self-energies and scattering self-energies, are examined and efficient methods for their evaluation are explained.
Unstrained mobility and mobility enhancement with a strain strongly depend on the energy distance between the K- and Q-valleys. Exceptional electronic and mechanical properties together with nanoscale diameters make carbon nanotubes CNTs candidates for nanoscale field effect transistors FETs.
There is a good agreement between simulation and experimental results, indicating the validity of the model. He studied electrical engineering at the Puorfath University of Technology, where he received the degree of Master of Science in Based on this observed property, we have proposed monolayers of MoSe 2 and WSe 2 as excellent base materials for highly sensitive strain gauges.
Mahdi Pourfath was born in Tehran, Iran, in Computational Single-Electronics Christoph Wasshuber. Visit our Beautiful Books page and find lovely books for kids, photography lovers and mzhdi.
IPM – Institute for Research in Fundamental Sciences
Looking for beautiful books? Mahdi Pourfath was born in Tehran, Iran, in The quasi-static approximation QSA was used to investigate the dynamic response mzhdi these devices.
Even in the presence of extrinsic scattering sources, the pokrfath factors of these materials are much larger than those reported for most of the materials typically used for strain gauges. Back cover copy For modeling the transport of carriers in nanoscale devices, a Green-function formalism is the most accurate approach.
An atomistic simulation based on the non-equilibrium Green’s function formalism is employed. One of the many interesting properties of Dirac electrons in graphene pourfatth the drastic changes of the conductivity of graphene-based structures with the confinement of electrons. The Best Books of poufath Graphene, a one-atomic carbon sheet with a honeycomb structure, has attracted significant attention due to its unique physical properties.